KRF7663

SMD Type HEXFET Power MOSFET KRF7663 Features Trench Technology Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile ( 1.1mm) Available in Tape & Reel IC IC Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Continuous Drain Current, VGS @ -4.5V @ Ta = 25 Continuous Drain Current, VGS @ -4.5V @ Ta = 70 Pulsed Drain Current *1 Power Dissipation Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy *2 Gate-to-Source Voltage Junction and Storage Temperature Range Maximum Junction-to-Ambient *3 EAS VGS TJ, TSTG R JA Symbol VDS ID ID IDM Rating -20 -8.2 -6.6 -66 1.8 1.15 10 115 12 -55 to + 150 70 Unit V A @Ta= 25 @Ta= 70 PD W mW/ mJ V /W *1 Repetitive rating; pulse width limited by max. junction temperature. *2 Starting TJ = 25 , L = 17.8mH,RG = 25 , IAS = -3.6A *3 When mounted on 1 inch square copper board, t 10 sec www.kexin.com.cn 1 SMD Type KRF7663 Electrical Characteristics Ta = 25 Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Rec...