KRF9952

SMD Type HEXFET Power MOSFET KRF9952 IC IC Features Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V @ Ta = 25 Continuous Drain Current, VGS @ 10V @ Ta = 70 Pulsed Drain Current *1 Continuous Source Current (Diode Conduction) Power Dissipation Power Dissipation @Ta= 25 @Ta= 70 EAS IAR EAR dv/dt TJ, TSTG R JA Symbol VDS VGS ID ID IDM IS PD N-Channel 30 20 3.5 2.8 16 1.7 2 1.3 44 2.0 0.25 5.0 P-Channel Unit V V -2.3 -1.8 -10 -1.3 A W 57 -1.3 mJ A mJ -5 -55 to + 150 62.5 /W V/ns A Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt *2 Junction and Storage Temperature Range Maximum Junction-to-Ambient *3 *1 Repetitive rating; pulse width limited by max. junction temperature. *2 N-Channel ISD P-Channel ISD 2.0A, di/dt -1.3A, di/dt 100A/ 84A/ s, VDD s, VDD 10sec. V(BR)DSS, TJ V(BR)DSS, TJ 150 150 *3 Surface mounted on FR-4 board, t www.kexin.com.cn 1 SMD Type KRF9952 Electrical Characteristics Ta = 25 Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Symbol V(...