KSD5066

j£i±£u 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. , Una. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN Power Transistor DESCRIPTION High Breakdown Voltage- : VCBO= 1500V (Min) High Switching Speed High Reliability APPLICATIONS Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25°C) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V KSD5066 I2 11 <^3 PIN 1. BASE 2. COLLECTOR 3. EMITTER w1 2 : TO-3PN package c-«-~ .H K I** *= . G ~—L VCEO Collector-Emitter Voltage 800 v VEBO Emitter-Base Voltage 6 V Ic Collector Current- Continuous 5 A ICP Collector Current-Peak Collector Power Dissipation PC @TC=25'C Tj Junction Temperature 16 A 120 W 150 c Tstg Storage Temperature Range -55-150 'C "p _^ o mm DIM MIN MAX A 19.90 20.10 B 15.50 15.70 C 4.70 4.90 D 0.90 1.10 E 1.90 2.10 F 3.40 3,60 G 2.90 3.10 H 3.20 3,40 J 0.595 0.605 K 20.50 20.70 L 1.90 2.10 N 10.69 10.91 Q 4.90 5.10 R 3.35 3.45 S 1.995 2.005 U 5.90 6.10 Y 9.90 10.10 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in itsuse. NJ Semi-Conductors encourages customers to verify that datasheets are current...