KSD5071

20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. , One, Silicon NPN Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 KSD5071 DESCRIPTION High Breakdown Voltage- : VCBO= 1500V (Min) High Switching Speed High Reliability Built-in Damper Diode APPLICATIONS Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V Ic Collector Current- Continuous 3.5 A ICP Collector Current-Peak Collector Power Dissipation PC @ TC=25'C Tj Junction Temperature 10 A 50 W 150 c Tstg Storage Temperature Range -55-150 r 12 PIN 1. BASE 2.COLLECTOR 3. EMITTER TO-3PML package / -~ c *- t _^s» F- _ t , ..., «iatPf ''IV ^_ji ' A kli-'- t mm DIM MIN MAX A 19,90 20,10 B 15.90 16,10 C 5,50 5.70 D 0,90 1.10 F 3.30 3.50 G 2.90 3.10 H 5.90 6,10 J Q. 595 0.605 K 22.30 22,50 L 1,90 2.10 N 10,80 11.00 CJ 4.90 5,10 R 3.75 3.95 S 3,20 3.40 U 9.90 10.10 Y 4.70 4.90 Z 1.90 2.10 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice, Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in itsuse. NJ Semi-Conductors encourages customers to verif...