DatasheetsPDF.com

KSD5074 Datasheet

Part Number KSD5074
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description Silicon NPN Power Transistor
Datasheet KSD5074 DatasheetKSD5074 Datasheet (PDF)

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KSD5074 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6V IC Collector Current- Continuous 2.5 A ICP Collector Current-.

  KSD5074   KSD5074






Part Number KSD5074
Manufacturers NJS
Logo NJS
Description Silicon NPN Power Transistor
Datasheet KSD5074 DatasheetKSD5074 Datasheet (PDF)

cSzmi-Conductoi ^Pi 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. , {Jnc. Silicon NPN Power Transistor DESCRIPTION • High Breakdown Voltage- : VCBO= 1500V (Min) • High Switching Speed • High Reliability APPLICATIONS • Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VOEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V lo Collector Current- Continuous 2.5 .

  KSD5074   KSD5074







Silicon NPN Power Transistor

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KSD5074 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6V IC Collector Current- Continuous 2.5 A ICP Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 10 A 50 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website:www.iscsemi.cn 1 INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KSD5074 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.6A VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.6A ICBO Collector Cutoff Current VCB= 800V ; IE= 0 IEBO Emitter Cutoff Current VEB= 5V ; IC= 0 hFE DC Current Gain IC= 0.5A ; VCE= 5V fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V tf Fall Time IC= 2A , IB1= 0.6A ; IB2= -1.2A RL= 100Ω; VCC= 200V MIN TYP. MAX UNIT 8.0 V 1.5 V 10 μA 1 mA 8 3 MHz 0.4 μs isc website:www.iscsemi.cn 2 .


2016-08-11 : RT8059    CH7036    FYD66PD3    FY6PF6N-D3    FYD940PD3    FYD825PD3    FYD815PD3    FY8PF25N-D3    FY8PF15N-D3    FY8S25-D3   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)