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KSD5074 Transistor Datasheet PDFSilicon NPN Power Transistor Silicon NPN Power Transistor |
| Part Number | KSD5074 |
|---|---|
| Description | Silicon NPN Power Transistor |
| Feature | cSzmi-Conductoi ^Pi
20 STERN AVE. SPRING FIELD, NEW JERSEY 07081 U. S. A. , {Jnc. Silicon NPN Power Transistor DESCRIP TION • High Breakdown Voltage- : VCBO = 1500V (Min) • High Switching Speed • High Reliability APPLICATIONS • Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATING S(Ta=25'C) SYMBOL PARAMETER VALUE U NIT VCBO Collector-Base Voltage 1500 V VOEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V l o Collector Current- Continuous 2. 5 A ICP Collector Current-Peak Collect or Power Dissipation PC @ TC=25'C Tj Junction Temperature . |
| Manufacture | NJS |
| Datasheet |
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| Part Number | KSD5074 |
|---|---|
| Description | Silicon NPN Power Transistor |
| Feature | INCHANGE Semiconductor
isc Silicon NPN P ower Transistor
isc Product Specificat ion
KSD5074
DESCRIPTION ·High Breakdo wn Voltage-
: VCBO= 1500V (Min) ·High Switching Speed ·High Reliability
APP LICATIONS ·Designed for color TV horiz ontal output applicaitions
ABSOLUTE MA XIMUM RATINGS(Ta=25℃)
SYMBOL
PARAME TER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitt er Voltage
800 V
VEBO
Emitter-Base V oltage
6V
IC Collector Current- Conti nuous
2. 5 A ICP Collector Current-Pe ak PC Collector Power Dissipation @ T C=25℃ TJ Junction Temperature 10 A 50 W 150 ℃ Tstg Stora . |
| Manufacture | Inchange Semiconductor |
| Datasheet |
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