KSH122 / KSH122I — NPN Silicon Darlington Transistor
November 2013
KSH122 / KSH122I NPN Silicon Darlington Transistor
...
KSH122 / KSH122I — NPN Silicon Darlington Transistor
November 2013
KSH122 / KSH122I NPN Silicon Darlington Transistor
Features
Description
D-PAK for Surface Mount Applications High DC Current Gain
Designed for general-purpose power and switching, such as output or driver stages in applications.
Built-in Damper Diode at E-C
Lead Formed for Surface Mount Applications (No Suffix)
Straight Lead (I-PAK, “ - I ” Suffix)
Electrically Similar to Popular TIP122
Complement to KSH127
Applications
Switching Regulators Converters Power
Amplifiers
Equivalent Circuit C
1
D-PAK 1
I-PAK
1.Base 2.Collector 3.Emitter
B
R1
3 ≅ LΩ 3 ≅ LΩ
R2 E
Ordering Information
Part Number KSH122TF KSH122TM KSH122ITU
Top Mark KSH122 KSH122 KSH122-I
Package TO-252 3L (DPAK) TO-252 3L (DPAK) TO-251 3L (IPAK)
Packing Method Tape and Reel Tape and Reel Rail
© 2002 Fairchild Semiconductor Corporation
KSH122 / KSH122I Rev. 1.1.0
1
www.fairchildsemi.com
KSH122 / KSH122I — NPN Silicon Darlington Transistor
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted.
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