| DatasheetsPDF.com |
KTA1276 TRANSISTOR Datasheet PDFEPITAXIAL PLANAR PNP TRANSISTOR EPITAXIAL PLANAR PNP TRANSISTOR |
　
　
　
| Part Number | KTA1276 |
|---|---|
| Description | EPITAXIAL PLANAR PNP TRANSISTOR |
| Feature | SEMICONDUCTOR
TECHNICAL DATA
GENERAL PUR POSE APPLICATION. FEATURES á´ŒGood Line arity of hFE. á´ŒComplementary to KTC32 30. MAXIMUM RATING (Ta=25á´±) CHARACTE RISTIC Collector-Base Voltage Collector -Emitter Voltage Emitter-Base Voltage C ollector Current Emitter Current Collec tor Power Dissipation (Tc=25á´±) Juncti on Temperature Storage Temperature Rang e SYMBOL VCBO VCEO VEBO IC IE PC Tj Ts tg RATING -30 -30 -5 -3 3 10 150 -55á´ •150 UNIT V V V A A W á´± á´± H E Q KTA1276 EPITAXIAL PLANAR PNP TRANSISTO R A R S F B D T L CC MM K 123 J 1. B ASE 2. COLLECTOR (HEAT SINK) 3. EMITTER O NG P DIM A B C D E F G . |
| Manufacture | KEC |
| Datasheet |
|
|
　
　
　
　
　
　
| Part Number | KTA1276 |
|---|---|
| Description | PNP Transistor |
| Feature | isc Silicon PNP Power Transistor
DESCRI PTION ·Collector-Emitter Breakdown Vol tage
: V(BR)CEO= -30V(Min) ·Good Linea rity of hFE ·100% avalanche tested ·M inimum Lot-to-Lot variations for robust device
performance and reliable operat ion
APPLICATIONS ·Designed for general purpose applications. ABSOLUTE MAXIMU M RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltag e -30 V VCEO Collector-Emitter Volta ge -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuou s PC Total Power Dissipation @ TC=25â „ƒ TJ Junction Temperature -3 A 20 W 150 ℃ Tstg Stor . |
| Manufacture | INCHANGE |
| Datasheet |
 |
　
　
　
　
|
@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact) |