KTA1276

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. FEATURES ᴌGood Linearity of hFE. ᴌComplementary to KTC3230. MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation (Tc=25ᴱ) Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC IE PC Tj Tstg RATING -30 -30 -5 -3 3 10 150 -55ᴕ150 UNIT V V V A A W ᴱ ᴱ H E Q KTA1276 EPITAXIAL PLANAR PNP TRANSISTOR A R S F B D T L CC MM K 123 J 1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER O NG P DIM A B C D E F G H J K L M N O P Q R S T MILLIMETERS 10.30 MAX 15.30 MAX 0.80 Φ3.60 +_ 0.20 3.00 6.70 MAX 13.60+_ 0.50 5.60 MAX 1.37 MAX 0.50 1.50 MAX 2.54 4.70 MAX 2.60 1.50 MAX 1.50 9.50+_ 0.20 8.00+_ 0.20 2.90 MAX TO-220AB ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage Emitter Base Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency ICBO IEBO V(BR)CEO V(BR)EBO hFE(1) (Note) hFE(2) VCE(sat) VBE fT Collector Output Capacitance Note : hFE(1) Classification O:70~140, Cob Y:120~240 TEST CONDITION VCB=-20V, IE=0 VEB=-5V, IC=0 IC=-10mA, IB=0 IE=-1mA, IC=0 VCE=-2V, IC=-0.5A VCE=-2V, IC=-2.5A IC=-2A, IB=-0.2A VCE=-2V, IC=-0.5A VCE=-2V, IC=-0.5A VCB=-10V, IE=0, f=1MHz MIN. - -30 -5 70 25 - TYP. - -0.3 -0.75 100 40 MAX. -1.0 -1.0 240 -0.8 -1.0...