KTA1381

isc Silicon PNP Power Transistor INCHANGE Semiconductor KTA1381 DESCRIPTION ·High voltage ·Low reverse transfer capacitance ·Excellent gain linearity for low THD ·High frequency ·Complement to KTC3503 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio voltage amplifier and current source ·CRT display ,video output ·General purpose amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -100 mA 1.5 W 7 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor INCHANGE Semiconductor KTA1381 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -20mA; IB= -2mA VBE(sat) Base-Emitter Saturation Voltage IC= -20mA; IB= -2mA ICBO Collector Cutoff Current VCB= -200V; IE= 0 IEBO Emitter Cutoff Current VEB= -4V; IC= 0 hFE DC Current Gain IC= -10mA; VCE= -10V fT Current-Gain—Bandwidth Product IC= -10mA; VCE= -30V COB Output Capacitance IE= 0; VCB= -30V; f= 1.0MHz MIN TYP. MAX UNIT -300 V -0.6 V ...