KTA1517

SEMICONDUCTOR TECHNICAL DATA LOW NOISE AMPLIFIER APPLICATION. FEATURES High Voltage : VCEO=-120V. Excellent hFE Linearity : hFE(0.1mA)/hFE(2mA)=0.95(Typ.). High hFE: hFE=200 700. Low Noise : NF=1dB(Typ.), 10dB(Max.). Complementary to KTC3911S. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature VCBO VCEO VEBO IC IB PC Tj Storage Temperature Range Tstg RATING -120 -120 -5 -100 -20 150 150 -55 150 UNIT V V V mA mA mW A G H D KTA1517 EPITAXIAL PLANAR PNP TRANSISTOR E L BL 23 1 PP M 1. EMITTER 2. BASE 3. COLLECTOR DIM A B C D E G H J K L M N P MILLIMETERS 2.93+_ 0.20 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 SOT-23 C N K J Marking hFE Rank ACType Name Lot No. ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current ICBO VCB=-120V, IE=0 Emitter Cut-off Current IEBO VEB=-5V, IC=0 DC Current Gain hFE (Note) VCE=-6V, IC=-2mA Collector-Emitter Saturation Voltage VCE(sat) IC=-10mA, IB=-1mA Transition Frequency fT VCE=-6V, IC=-1mA Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz Noise Figure VCE=-6V, IC=-0.1mA NF f=1kHz, Rg=10k Note : hFE Classification GR(G):200 400 BL(L):350 700 MIN. - 200 - TYP. - 100 4.0 MAX. -0.1 -0.1 700 -0.3 - UNIT A A V MHz pF - 1.0 10 dB 2006....