SEMICONDUCTOR
TECHNICAL DATA
RELAY DRIVERS, LAMP DRIVERS, MOTOR DRIVERS, STROBES APPLICATION.
FEATURES Adoption of MBI...
SEMICONDUCTOR
TECHNICAL DATA
RELAY DRIVERS, LAMP DRIVERS, MOTOR DRIVERS, STROBES APPLICATION.
FEATURES Adoption of MBIT Processes. Large Current Capacitance. Low Collector-to-Emitter Saturation
Voltage. High-Speed Switching. Ultrasmall Package Facilitates Miniaturization in end Products. High Allowable Power Dissipation. Complementary to KTC3542T.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base
Voltage
Collector-Emitter
Voltage
Emitter-Base
Voltage
Collector Current
DC Pulse
Base Current
Collector Power Dissipation
Junction Temperature
VCBO VCEO VEBO
IC ICP IB PC * Tj
-30 -30 -5 -3 -5 -600 0.9 150
Storage Temperature Range
Tstg -55 150
* Package mounted on a ceramic board (600 0.8 )
UNIT V V V
A
mA W
C L
A F GG
KTA1542T
EPITAXIAL PLANAR PNP TRANSISTOR
E KB
2 3
1
D
DIM A B
C D E F G H I J K L
MILLIMETERS 2.9 +_0.2
1.6+0.2/-0.1
0.70+_ 0.05 0.4+_ 0.1
2.8+0.2/-0.3 1.9+_ 0.2
0.95 0.16+_ 0.05 0.00-0.10
0.25+0.25/-0.15 0.60 0.55
I
H JJ
1. EMITTER 2. BASE 3. COLLECTOR
TSM Marking
S HType Name
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown
Voltage Collector-Emitter Breakdown
Voltage Emitter-Base Breakdown
Voltage
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation
Voltage DC Current Gain Transition Frequency Collector Output Capacitance
ICBO IEBO V(BR)CBO V(BR)CEO V(BR)EBO VCE(sat)1 VCE(sat)2 VBE(sat) hFE fT Cob
TEST CONDITION
...
