KTA1962

isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -230V(Min) ·Good Linearity of hFE ·Complement to Type KTC5242 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommend for 80W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -230 V VCEO Collector-Emitter Voltage -230 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -1.5 A 130 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ KTA1962 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor KTA1962 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0 -230 V VCE(sat) Collector-Emitter Saturation Voltage IC= -8A; IB= -0.8A -3.0 V VBE(on) Base-Emitter On Voltage IC= -7A; VCE= -5V -1.5 V ICBO Collector Cutoff Current VCB= -230V ; IE= 0 -5 μA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -5 μA hFE-1 DC Current Gain IC= -1A; VCE= -5V 55 160 hFE-2 DC Current Gain IC= -7A; VCE= -5V 35 COB Output Capacitance IE=0; VCB= -10V; ftest= 1.0MHz 360 pF fT Current-Gain—Band...