SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT APPLICATION.
FEATURES ᴌComplementary to KTA1273.
MAXIMUM RATING (Ta=25ᴱ)
CHA...
SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT APPLICATION.
FEATURES ᴌComplementary to KTA1273.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range
VCBO VCEO VEBO
IC IE PC Tj Tstg
RATING 30 30 5 2 -2 1 150
-55ᴕ150
UNIT V V V A A W ᴱ ᴱ
O D
KTC3205
EPITAXIAL PLANAR NPN TRANSISTOR
BD
G JA R
P DEPTH:0.2
C
Q K
FF
HH M EM
123
HL
NN 1. EMITTER 2. COLLECTOR 3. BASE
DIM MILLIMETERS
A 7.20 MAX
B 5.20 MAX
S C 0.60 MAX D 2.50 MAX
E 1.15 MAX
F 1.27
G 1.70 MAX
H 0.55 MAX J 14.00+_ 0.50
H
K L
0.35 MIN 0.75+_ 0.10
M4
N 25
O 1.25
P Φ1.50
Q 0.10 MAX R 12.50 +_ 0.50
S 1.00
TO-92L
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown
Voltage Emitter-Base Breakdown
Voltage DC Current Gain Collector-Emitter Saturation
Voltage Base-Emitter
Voltage Transition Frequency Collector Output Capacitance
ICBO IEBO V(BR)CEO V(BR)EBO hFE (Note) VCE(sat) VBE fT Cob
Note : hFE Classification 0:100ᴕ200, Y:160ᴕ320
TEST CONDITION VCB=30V, IE=0 VEB=5V, IC=0 IC=10mA, IB=0 IE=1mA, IC=0 VCE=2V, IC=500mA IC=1.5A, IB=0.03A VCE=2V, IC=500mA VCE=2V, IC=500mA VCB=10V, IE=0, f=1MHz
MIN. 30 5
100 -
TYP. -
120 13
MAX. 100 100 320 2.0 1.0 -
UNIT nA nA V V
V V MHz pF
1996. 9. 14
Revision No : 1
1/2
COLLECTOR CURRENT IC (mA)
KTC3205...