KTC3552T

SEMICONDUCTOR TECHNICAL DATA KTC3552T EPITAXIAL PLANAR NPN TRANSISTOR DC-DC CONVERTERS RELAY DRIVERS, LAMP DRIVERS, MOTOR DRIVERS, STROBES APPLICATION. FEATURES ᴌAdoption of FBET, MBIT Processes. ᴌHigh Current Capacitance. ᴌLow Collector-to-Emitter Saturation Voltage. ᴌHigh-Speed Switching. ᴌUltrasmall Package Facilitates Miniaturization in end Products. ᴌHigh Allowable Power Dissipation. ᴌComplementary to KTA1552T. MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range VCBO VCES VCEO VEBO IC ICP IB PC * Tj Tstg 80 80 50 6 3 6 600 0.9 150 -55ᴕ150 * Package mounted on a ceramic board (600Ὅᴧ0.8Ὂ) UNIT V V V A mA W ᴱ ᴱ C L A F GG E KB 23 1 D DIM A B C D E F G H I J K L MILLIMETERS 2.9 +_0.2 1.6+0.2/-0.1 0.70+_ 0.05 0.4+_ 0.1 2.8+0.2/-0.3 1.9+_ 0.2 0.95 0.16+_ 0.05 0.00-0.10 0.25+0.25/-0.15 0.60 0.55 I H JJ 1. EMITTER 2. BASE 3. COLLECTOR TSM Marking H LType Name Lot No. ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Transition Frequency Collector Output Capacitance ICBO IEBO V(BR)CBO V(BR)CES V(BR)CEO V(BR)EBO VCE(sat)1 VCE...