KTC3875

Production specification NPN Silicon Epitaxial Planar Transistor FEATURES z Complementary To KTA1504. z Excellent HFE Linearity. z Low noise. Pb Lead-free KTC3875 APPLICATIONS z General purpose application, switching application. ORDERING INFORMATION Type No. Marking KTC3875 ALO/ALY/ALG/ALL SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 60 VCEO Collector-Emitter Voltage 50 VEBO Emitter-Base Voltage 5 IC Collector Current -Continuous 150 IB Base Current 30 PC Collector Power Dissipation 150 Tj,Tstg Junction and Storage Temperature -55 to +150 Units V V V mA mA mW ℃ C056 Rev.A www.gmicroelec.com 1 Production specification NPN Silicon Epitaxial Planar Transistor KTC3875 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE=100μA,IC=0 5 V Collector cut-off current Emitter cut-off current ICBO VCB=60V,IE=0 IEBO VEB=5V,IC=0 0.1 μA 0.1 μA DC current gain hFE VCE=6V,IC=2mA 70 700 Collector-emitter saturation voltage VCE(sat) IC=100mA, IB=10mA 0.1 0.25 V Transition frequency Collector output capacitance Noise figure fT VCE=10V, IC= 1mA 80 MHz Cob VCB=10V,IE=0,f=1MHz NF VCE=6V,IC=0.1mA, F=1KHz,Rg=10KΩ 2.0 3.5 pF 1....