KTC4369

SEMICONDUCTOR TECHNICAL DATA KTC4369 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES Good Linearity of hFE. Complementary to KTA1658. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25 ) Junction Temperature VCBO VCEO VEBO IC IB PC Tj Storage Temperature Range Tstg RATING 30 30 5 3 0.3 15 150 -55 150 UNIT V V V A A W K A S E LL M DD NN J GF B P C DIM MILLIMETERS A 10.0+_ 0.3 B 15.0+_ 0.3 C 2.70 +_ 0.3 D 0.76+0.09/-0.05 E Φ3.2 +_ 0.2 F 3.0+_ 0.3 G 12.0+_ 0.3 H 0.5+0.1/-0.05 J 13.6 +_ 0.5 R K 3.7+_ 0.2 L 1.2+0.25/-0.1 M 1.5+0.25/-0.1 N 2.54 +_ 0.1 P 6.8+_ 0.1 Q 4.5 +_ 0.2 R 2.6 +_0.2 HS 0.5 Typ 123 Q 1. BASE 2. COLLECTOR 3. EMITTER TO-220IS ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage ICBO IEBO V(BR)CEO DC Current Gain hFE(1) (Note) hFE(2) Collector-Emitter Saturation Voltage VCE(sat) Base-Emitter Voltage VBE Transition Frequency fT Collector Output Capacitance Cob Note : hFE(1) Classification O:70~140, Y:120~240 TEST CONDITION VCB=20V, IE=0 VEB=5V, IC=0 IC=10mA, IB=0 VCE=2V, IC=0.5A VCE=2V, IC=2.5A IC=2A, IB=0.2A VCE=2V, IC=0.5A VCE=2V, IC=0.5A VCB=10V, IE=0, f=1MHz MIN. 30 70 25 - TYP. 0.3 0.75 100 35 MAX. 1.0 1.0 240 0.8 1.0 - UNIT A A V V V MHz pF 2007. 5. 22 Revisio...