isc Silicon NPN Power Transistor
DESCRIPTION ·High Collector-Emitter Breakdown Voltage
VCEO= 160V(Min) ·Complement to T...
isc Silicon NPN Power Transistor
DESCRIPTION ·High Collector-Emitter Breakdown
Voltage
VCEO= 160V(Min) ·Complement to Type KTA1659 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high
voltage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base
Voltage
160
V
VCEO
Collector-Emitter
Voltage
160
V
VEBO
Emitter-Base
Voltage
5.0
V
IC(DC)
Collector Current(DC)
1.5
A
IB(DC) PC TJ
Base Current
Collector Power Dissipation @TC=25℃
Junction Temperature
0.15
A
20
W
150
℃
Tstg
Storage Temperature
-55~150 ℃
KTC4370
isc website： www.iscsemi.com
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isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown
Voltage IC= 10mA; IB= 0
VCE(sat) Collector-Emitter Saturation
Voltage IC= 500mA; IB= 50mA
VBE(on) Base-Emitter On
Voltage
IC= 500mA; VCE= 5V
ICBO
Collector Cutoff Current
VCB= 160V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC=0
hFE
DC Current Gain
IC= 100mA ; VCE= 5V
hFE Classifications
O
Y
70-140 120-240
KTC4370
MIN TYP. MAX UNIT
160
V
1.5 V
1.0 V
1.0 μA
1.0 μA
70
240
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our product...
