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KTD1413 TRANSISTOR Datasheet PDFEPITAXIAL PLANAR NPN TRANSISTOR EPITAXIAL PLANAR NPN TRANSISTOR |
| Part Number | KTD1413 |
|---|---|
| Description | EPITAXIAL PLANAR NPN TRANSISTOR |
| Feature | SEMICONDUCTOR
TECHNICAL DATA
KTD1413
EP ITAXIAL PLANAR NPN TRANSISTOR
HIGH POW ER SWITCHING APPLICATIONS. HAMMER DRIVE R, PULSE MOTOR DRIVER APPLICATIONS. FEA TURES High DC Current Gain : hFE=2000(M in. ) at VCE=2V, IC=3A. Low Saturation V oltage : VCE(sat)=1. 5V(Max. ) at IC=3A. MAXIMUM RATING (Ta=25 ) CHARACTERISTI C SYMBOL Collector-Base Voltage Colle ctor-Emitter Voltage Emitter-Base Volta ge Collector Current Base Current Colle ctor Power Dissipation (Tc=25 ) Junctio n Temperature VCBO VCEO VEB0 IC IB PC Tj Storage Temperature Range Tstg RA TING 150 100 7 5 0. 5 25 150 -55 150 UN IT V V V A A W . |
| Manufacture | KEC |
| Datasheet |
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| Part Number | KTD1413 |
|---|---|
| Description | EPITAXIAL PLANAR NPN TRANSISTOR |
| Feature | SEMICONDUCTOR
TECHNICAL DATA
KTD1413
EP ITAXIAL PLANAR NPN TRANSISTOR
HIGH POW ER SWITCHING APPLICATIONS. HAMMER DRIVE R, PULSE MOTOR DRIVER APPLICATIONS. FEA TURES High DC Current Gain : hFE=2000(M in. ) at VCE=2V, IC=3A. Low Saturation V oltage : VCE(sat)=1. 5V(Max. ) at IC=3A. MAXIMUM RATING (Ta=25 ) CHARACTERISTI C SYMBOL Collector-Base Voltage Colle ctor-Emitter Voltage Emitter-Base Volta ge Collector Current Base Current Colle ctor Power Dissipation (Tc=25 ) Junctio n Temperature VCBO VCEO VEB0 IC IB PC Tj Storage Temperature Range Tstg RA TING 150 100 7 5 0. 5 25 150 -55 150 UN IT V V V A A W . |
| Manufacture | KEC |
| Datasheet |
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