KTD882

SEMICONDUCTOR TECHNICAL DATA AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING FEATURES Complementary to KTB772. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse (Note) Base Current (DC) VCBO VCEO VEBO IC ICP IB Collector Power Dissipation Ta=25 Tc=25 PC Junction Temperature Storage Temperature Range Tj Tstg Note : Pulse Width 10mS, Duty Cycle 50%. RATING 40 30 5 3 7 0.6 1.5 10 150 -55 150 UNIT V V V A A W KTD882 EPITAXIAL PLANAR NPN TRANSISTOR A B C H J K D E F G L M N O P 12 3 1. EMITTER 2. COLLECTOR 3. BASE DIM A B C D E F G H J K L M N O P MILLIMETERS 8.3 MAX 5.8 0.7 Φ3.2+_ 0.1 3.5 11.0 +_ 0.3 2.9 MAX 1.0 MAX 1.9 MAX 0.75 +_ 0.15 15.5+_ 0.5 2.3+_ 0.1 0.65 +_ 0.15 1.6 3.4 MAX TO-126 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current Emitter-Cut-off Current DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage * Current Gain Bandwidth Product ICBO IEBO hFE(1) hFE(2) (Note) VCE(sat) VBE(sat) fT VCB=30V, IE=0 VEB=3V, IC=0 VCE=2V, IC=20mA VCE=2V, IC=1A IC=2A, IB=0.2A IC=2V, IB=0.2A VCE=5V, IC=0.1A Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz * Pulse Test : Pulse Width 350 S, Duty Cycle 2% Pulsed Note: hFE(2) Classification O:100 200 , Y:160 320 , GR:200 400 MIN. 30 100 - TYP. - 150 160 0.3 1.0 90 45 MAX. 1 1 400 0.5 2.0 - UNIT A A V V MHz pF ...