isc Silicon NPN Power Transistor
KTD998
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min) ·Good ...
isc Silicon NPN Power Transistor
KTD998
DESCRIPTION ·Collector-Emitter Breakdown
Voltage-
: V(BR)CEO= 120V(Min) ·Good Linearity of hFE ·Complement to Type KTB778 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·High power amplifier applications ·Recommend for 45-50W audio frequency amplifier
output stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
120
V
VCEO
Collector-Emitter
Voltage
120
V
VEBO
Emitter-Base
Voltage
5
V
IC
Collector Current-Continuous
10
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
1
A
80
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
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isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown
Voltage IC= 50mA ; IB= 0
VCE(sat) Collector-Emitter Saturation
Voltage IC= 5.0A; IB= 0.5A
VBE(on)
Base-Emitter On
Voltage
IC= 5A ; VCE= 5V
ICBO
Collector Cutoff Current
VCB= 120V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE
DC Current Gain
IC= 1A ; VCE= 5V
hFE Classifications
R
O
55-110 80-160
KTD998
MIN TYP. MAX UNIT
120
V
2.5
V
1.5
V
10 μA
10 μA
55
160
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