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KTD998 TRANSISTOR Datasheet PDFTRIPLE DIFFUSED NPN TRANSISTOR TRIPLE DIFFUSED NPN TRANSISTOR |
| Part Number | KTD998 |
|---|---|
| Description | TRIPLE DIFFUSED NPN TRANSISTOR |
| Feature | SEMICONDUCTOR TECHNICAL DATA HIGH POWER AMPLIFIER APPLICATION. FEATURES Recommended for 45 50W Audio Frequency Amplifier Output Stage. Complementary to KTB778. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse Base Current Collector Power Dissipation (Tc=25 ) Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC ICP IB PC Tj Tstg RATING 120 120 5 10 15 1 80 150 -55 150 UNIT V V V A A W L BE KTD998 TRIPLE DIFFUSED NPN TRANSISTOR DIM MILLIMETERS A U C R WW A B C D 16.30 MA. |
| Manufacture | KEC |
| Datasheet |
| Part Number | KTD998 |
|---|---|
| Description | TRIPLE DIFFUSED NPN TRANSISTOR |
| Feature | SEMICONDUCTOR TECHNICAL DATA HIGH POWER AMPLIFIER APPLICATION. FEATURES Recommended for 45 50W Audio Frequency Amplifier Output Stage. Complementary to KTB778. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse Base Current Collector Power Dissipation (Tc=25 ) Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC ICP IB PC Tj Tstg RATING 120 120 5 10 15 1 80 150 -55 150 UNIT V V V A A W L BE KTD998 TRIPLE DIFFUSED NPN TRANSISTOR DIM MILLIMETERS A U C R WW A B C D 16.30 MA. |
| Manufacture | KEC |
| Datasheet |
| Part Number | KTD998 |
|---|---|
| Description | Silicon NPN Power Transistors |
| Feature | isc Silicon NPN Power Transistor KTD998 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Good Linearity of hFE ·Complement to Type KTB778 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High power amplifier applications ·Recommend for 45-50W audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A IB Base . |
| Manufacture | Inchange Semiconductor |
| Datasheet |
| Part Number | KTD998 |
|---|---|
| Description | Silicon NPN Power Transistors |
| Feature | isc Silicon NPN Power Transistor KTD998 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Good Linearity of hFE ·Complement to Type KTB778 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High power amplifier applications ·Recommend for 45-50W audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A IB Base . |
| Manufacture | Inchange Semiconductor |
| Datasheet |
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