SEMICONDUCTOR
TECHNICAL DATA
General Description
This Trench MOSFET has better characteristics, such as fast switching...
SEMICONDUCTOR
TECHNICAL DATA
General Description
This Trench
MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for LED Lighting and DC/DC Converters.
FEATURES VDSS(Min.)= 100V, ID= 1.7A Drain-Source ON Resistance : RDS(ON)=0.36 Qg(typ.) =4.2nC
(max) @VGS =10V
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
SYMBOL RATING
Drain-Source
Voltage
VDSS
100
Gate-Source
Voltage
VGSS
20
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3)
Drain Power Dissipation
TA=25 Derate above25
ID IDP EAS EAR dv/dt
PD
1.7* 1.0* 6.4* 12.4
0.1
4.5 2.0* 0.016
Maximum Junction Temperature
Tj
150
Storage Temperature Range Thermal Characteristics
Tstg -55 150
Thermal Resistance, Junction-toAmbient
RthJA
62.5*
* : Surface Mounted on FR4 Board (50mm 50mm, 1.0t)
UNIT V V
A
mJ mJ V/ns W W/
/W
KU3600N10W
N CHANNEL TRENCH MOS FIELD EFFECT TRANSISTOR
PIN CONNECTION
2011. 4. 7
Revision No : 0
1/6
KU3600N10W
ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Static
Drain-Source Breakdown
Voltage Breakdown
Voltage Temperature Coefficient Drain Cut-off Current
BVDSS
ID=250 A, VGS=0V
BVDSS/ Tj ID=250 A, Referenced to 25
IDSS VDS=100V, VGS=0V,
Gate Threshold
Voltage Gate Leakage Current
Drain-Source ON Resistance Dynamic
Vth IGSS
RDS(ON)
VDS=V...
