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KYZ35K6

Diotec Semiconductor

Silicon Press-Fit-Diodes

KYZ 35A05 ... KYZ 35A6 KYZ 35K05 ... KYZ 35K6 Silicon Press-Fit-Diodes Silizium-Einpreßdioden Nominal current – Nennstr...


Diotec Semiconductor

KYZ35K6

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Description
KYZ 35A05 ... KYZ 35A6 KYZ 35K05 ... KYZ 35K6 Silicon Press-Fit-Diodes Silizium-Einpreßdioden Nominal current – Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung Metal press-fit case with glass seal Metall-Einpreßgehäuse mit Glasdurchführung Weight approx. – Gewicht ca. Dimensions / Maße in mm 35 A 50…600 V 10 g Standard packaging: bulk Standard Lieferform: lose im Karton Maximum ratings Type / Typ Wire to / Draht an Anode Cathode KYZ 35A05 KYZ 35A1 KYZ 35A2 KYZ 35A3 KYZ 35A4 KYZ 35A6 KYZ 35K05 KYZ 35K1 KYZ 35K2 KYZ 35K3 KYZ 35K4 KYZ 35K6 Repetitive peak reverse voltage Periodische Spitzensperrspanng. VRRM [V] 50 100 200 300 400 600 Grenzwerte Surge peak reverse voltage Stoßspitzensperrspannung VRSM [V] 60 120 240 360 480 700 Max. average forward rectified current, R-load Dauergrenzstrom in Einwegschaltung mit R-Last Repetitive peak forward current Periodischer Spitzenstrom Peak forward surge current, 50 / 60 Hz half sine-wave Stoßstrom für eine 50 / 60 Hz Sinus-Halbwelle Rating for fusing – Grenzlastintegral, t <10 ms Operating junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Maximum pressure – Maximaler Einpreßdruck TC = 100/C f > 15 Hz TA = 25/C TA = 25/C IFAV IFRM IFSM i2t Tj TS 35 A 110 A 1) 360 / 400 A 660 A2s – 50...+175 /C – 50...+175 /C 7 kN 1 88 ) Max. case temperature TC = 150/C – Max. Gehäusetemperatur TC = 150 28.02.2002 KYZ 35A05 ... KYZ 35A6 KYZ 35K05 ... KYZ 35K6 Characteristics Forw...




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