SMD Type
Transistors IC
Surface Mount NPN Silicon Power Darlington Transistor KZT122 (CZT122)
SOT-223
Unit: mm
+0.2 ...
SMD Type
Transistors IC
Surface Mount NPN Silicon Power Darlington Transistor KZT122 (CZT122)
SOT-223
Unit: mm
+0.2 3.50-0.2
Features
High current (max. 5A). Low
voltage (max. 100V).
6.50
+0.2 -0.2
0.1max +0.05 0.90-0.05
+0.1 3.00-0.1
+0.2 0.90-0.2 +0.3 7.00-0.3
4
1 Base 2 Collector
1 2 2.9 4.6 3
+0.1 0.70-0.1
3 Emitter 4 Collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base
voltage Collector-emitter
voltage Emitter-base
voltage Collector current Base current power dissipation Thermal Resistance.Junction-to-Ambient Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP IB PD R
JA
Rating 100 100 5 5 8 120 2 62.5 150 -65 to +150
Unit V V V A A mA W /W
Tj Tstg
Electrical Characteristics Ta = 25
Parameter Collector to emitter breakdown
voltage Collctor cutoff current Collector cutoff current Emitter cutoff current DC current gain Collector to emitter saturation
voltage Base to emitter saturation
voltage Output capacitance Transition frequency Symbol VCEO ICEO ICBO IEBO hFE IC=30mA VCE=50V VCB = 100 V VEB = 5.0 V IC = 500 mA; VCE =3.0 V IC = 3A; VCE = 3.0V VCE(sat) IC = 3.0A; IB = 12mA VBE(sat) IC = 5.0A; IB = 20mA Cob fT VCB = 10 V, IE = 0,f=1.0MHz IC= 3A; VCE =4V; f = 1.0 MHz 4.0 1000 1000 2.0 4.0 200 V V pF MHz Testconditons Min 100 500 200 2.0 Typ Max Unit V A A mA
+0.15 1.65-0.15
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Free Datasheet http://www.datasheet4u.com/
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