KZT2222A

SMD Type NPN Switching Transistor KZT2222A Transistors IC SOT-223 Unit: mm +0.2 3.50-0.2 Features High current (max. 600 mA) Low voltage (max.40 V). 6.50 +0.2 -0.2 0.1max +0.05 0.90-0.05 +0.1 3.00-0.1 +0.2 0.90-0.2 +0.3 7.00-0.3 4 1 Base 2 Collector 1 2 2.9 4.6 3 +0.1 0.70-0.1 3 Emitter 4 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Peak base current Total power dissipation Ta Storage temperature Junction temperature Operating ambient temperature Thermal resistance from junction to ambient Thermal resistance from junction to soldering point 25 Symbol VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Rth(j-a) Rth(j-s) Rating 75 40 6 600 800 200 1 -65 to +150 150 -65 to +150 109 28 K/W K/W Unit V V V mA mA mA W +0.15 1.65-0.15 www.kexin.com.cn 1 Free Datasheet http://www.datasheet4u.com/ SMD Type KZT2222A Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current Symbol ICBO IEBO Testconditons IE = 0; VCB = 60 V IE = 0; VCB = 60 V; Tj = 125 IC = 0; VEB = 5 V IC = 0.1 mA; VCE = 10 V IC = 1 mA; VCE = 10 V IC = 10 mA; VCE = 10 V DC current gain hFE IC = 10 mA; VCE = 10 V;Ta = -55 IC = 150 mA; VCE = 1 V * IC = 150 mA; VCE = 10 V * IC = 500 mA; VCE = 10 V * collector-emitter saturation voltage VCEsat IC = 150 mA; IB = 15 mA IC = 500 mA; IB = 50 mA base-emitter saturation voltage Collector capacitance Emitter capacitance ...