KZT2907A

SMD Type Transistors PNP Transistors PZT2907A (KZT2907A) ■ Features ● Epitaxial planar die construction ● Complementary to PZT2222A SOT-223 6.50±0.2 3.00±0.1 4 7.0±0.3 3.50±0.2 123 10 Unit:mm 1.80 (max) 0.02 ~ 0.1 2.30 (typ) 4.60 (typ) 0.70±0.1 0.250 Gauge Plane 1.Base 2.Collector 3.Emitter 4.Collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC PC TJ Tstg Rating -60 -60 -5 -600 1 150 -55 to 150 Unit V mA W ℃ www.kexin.com.cn 1 SMD Type PNP Transistors PZT2907A (KZT2907A) ■ Electrical Characteristics Ta = 25℃ Parameter Collector- base breakdown voltage Collector- emitter breakdown voltage Emitter - base breakdown voltage Collector-base cut-off current Emitter cut-off current Collector-emitter saturation voltage Base - emitter saturation voltage DC current gain Delay time Rise time Storage time Fall time Emitter input capacitance Collector output capacitance Transition frequency Symbol Test Conditions VCBO Ic= -100 μA， IE= 0 VCEO VEBO Ic= -10 mA， IB= 0 IE= -100μA， IC= 0 ICBO VCB= -50 V , IE= 0 IEBO VEB= -5V , IC=0 IC=-150 mA, IB=-15mA VCE(sat) IC= -500 mA, IB= -50mA IC=-150 mA, IB=-15mA VBE(sat) IC= -500 mA, IB= -50mA hFE(1) VCE= -10V, IC=- 0.1mA hFE(2) VCE= -10V, IC= -1mA hFE(3) VCE= -10V, IC=- 10mA hFE(4) VCE= -10V, IC= -150mA hFE(5)...