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KZT591

Kexin

PNP Transistors

SMD Type Transistors PNP Transistors FZT591 (KZT591) SOT-223 6.50±0.2 3.00±0.1 10 Unit:mm ■ Features ● Collector...


Kexin

KZT591

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Description
SMD Type Transistors PNP Transistors FZT591 (KZT591) SOT-223 6.50±0.2 3.00±0.1 10 Unit:mm ■ Features ● Collector Current Capability IC=-1A ● Collector Emitter Voltage VCEO=-60V ● Complementary to FZT491 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector Current - Pulse Base Current Collector Power Dissipation Junction Temperature Storage Temperature range ■ Electrical Characteristics Ta = 25℃ Parameter Collector- base breakdown voltage Collector- emitter breakdown voltage Emitter - base breakdown voltage Collector-base cut-off current Collector-emitter cut-off current Emitter cut-off current Collector-emitter saturation voltage Base - emitter saturation voltage Base-Emitter Turn-On Voltage DC current gain (Note.1) Collector output capacitance Transition frequency Note.1: Pulse width=300us. Duty cycle ≤ 2% 4 7.0±0.3 3.50±0.2 Symbol VCBO VCEO VEBO IC ICP IB PC TJ Tstg Rating -80 -60 -5 -1 -2 -200 2 150 -55 to 150 1.80 (max) 0.02 ~ 0.1 123 2.30 (typ) 4.60 (typ) 0.70±0.1 0.250 Gauge Plane 1.Base 2.Collector 3.Emitter 4.Collector Unit V A mA W ℃ Symbol Test Conditions VCBO Ic= -100 μA, IE=0 VCEO Ic= -10 mA, IB=0 VEBO IE= -100μA, IC=0 ICBO VCB= -60 V , IE=0 ICES VCES =-60V,IB=0 IEBO VEB= -4V , IC=0 IC=-500mA, IB=-50mA (Note.1) VCE(sat) IC=-1 A, IB=-100mA (Note.1) VBE(sat) IC=-1 A, IB=-100mA (Note.1) VBE(on) VCE= -5V, IC= -1A (Note.1) hF...




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