SMD Type
Transistors
PNP Transistors
FZT591 (KZT591)
SOT-223
6.50±0.2 3.00±0.1
10
Unit:mm
■ Features
● Collector...
SMD Type
Transistors
PNP Transistors
FZT591 (KZT591)
SOT-223
6.50±0.2 3.00±0.1
10
Unit:mm
■ Features
● Collector Current Capability IC=-1A ● Collector Emitter
Voltage VCEO=-60V ● Complementary to FZT491
■ Absolute Maximum Ratings Ta = 25℃
Parameter Collector - Base
Voltage Collector - Emitter
Voltage Emitter - Base
Voltage Collector Current - Continuous Collector Current - Pulse Base Current Collector Power Dissipation Junction Temperature Storage Temperature range
■ Electrical Characteristics Ta = 25℃
Parameter Collector- base breakdown
voltage Collector- emitter breakdown
voltage Emitter - base breakdown
voltage Collector-base cut-off current Collector-emitter cut-off current Emitter cut-off current
Collector-emitter saturation
voltage
Base - emitter saturation
voltage Base-Emitter Turn-On
Voltage
DC current gain
(Note.1)
Collector output capacitance Transition frequency
Note.1: Pulse width=300us. Duty cycle ≤ 2%
4
7.0±0.3 3.50±0.2
Symbol VCBO VCEO VEBO IC ICP IB PC TJ Tstg
Rating -80 -60 -5 -1 -2 -200 2 150
-55 to 150
1.80 (max) 0.02 ~ 0.1
123
2.30 (typ) 4.60 (typ)
0.70±0.1
0.250 Gauge Plane
1.Base 2.Collector 3.Emitter 4.Collector
Unit
V
A
mA W ℃
Symbol
Test Conditions
VCBO Ic= -100 μA, IE=0
VCEO Ic= -10 mA, IB=0
VEBO IE= -100μA, IC=0
ICBO VCB= -60 V , IE=0
ICES VCES =-60V,IB=0
IEBO VEB= -4V , IC=0
IC=-500mA, IB=-50mA (Note.1) VCE(sat)
IC=-1 A, IB=-100mA (Note.1)
VBE(sat) IC=-1 A, IB=-100mA (Note.1)
VBE(on) VCE= -5V, IC= -1A (Note.1)
hF...