KZTA42

SMD Type Transistors NPN Transistors PZTA42 (KZTA42) SOT-223 6.50±0.2 3.00±0.1 10 Unit:mm ■ Features ● High breakdown voltage ● Low collector-emitter saturation voltage ● Complementary to PZTA92 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector Current - Pulse Collector Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC ICP PC TJ Tstg 4 7.0±0.3 3.50±0.2 1.80 (max) 0.02 ~ 0.1 123 2.30 (typ) 4.60 (typ) 0.70±0.1 0.250 Gauge Plane 1.Base 2.Collector 3.Emitter 4.Collector Rating 300 300 6 200 500 1 150 -55 to 150 Unit V mA W ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Collector- base breakdown voltage Collector- emitter breakdown voltage Emitter - base breakdown voltage Collector-base cut-off current Emitter cut-off current Collector-emitter saturation voltage Base - emitter saturation voltage DC current gain Collector output capacitance Transition frequency Symbol Test Conditions VCBO Ic= 100 μA， IE= 0 VCEO Ic= 1 mA， IB= 0 VEBO IE= 100μA， IC= 0 ICBO VCB= 200 V , IE= 0 IEBO VEB= 6V , IC=0 VCE(sat) IC=20 mA, IB=2mA VBE(sat) IC=20 mA, IB=2mA hFE(1) VCE= 10V, IC= 1mA hFE(2) VCE= 10V, IC= 10mA hFE(3) VCE= 10V, IC= 30mA Cob VCB= 20V, IE= 0,f=1MHz fT VCE= 20V, IC= 10mA,f=100MHz Min Typ Max Unit 300 300 V 6 100 nA 100 0.5 V 0.9 25 40 40 3 pF 50 MHz www.kexin.com.cn 1 ...