SMD Type
Transistors
■ Features
● High Voltage Driver Applications ● Complementary to PZTA42
PNP Transistors PZTA92 (KZTA92)
SOT-223
6.50±0.2 3.00±0.1
4
7.0±0.3 3.50±0.2
123
10
Unit:mm
■ Absolute Maximum Ratings Ta = 25℃
Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector Current - Pulse Collector Power Dissipation Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature Range
Symbol .
PNP Transistors
SMD Type
Transistors
■ Features
● High Voltage Driver Applications ● Complementary to PZTA42
PNP Transistors PZTA92 (KZTA92)
SOT-223
6.50±0.2 3.00±0.1
4
7.0±0.3 3.50±0.2
123
10
Unit:mm
■ Absolute Maximum Ratings Ta = 25℃
Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector Current - Pulse Collector Power Dissipation Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature Range
Symbol VCBO VCEO VEBO IC ICP PC RθJA TJ Tstg
Rating -300 -300
-5 -200 -500
1 125 150 -55 to 150
1.80 (max) 0.02 ~ 0.1
2.30 (typ) 4.60 (typ)
0.70±0.1
0.250 Gauge Plane
1.Base 2.Collector 3.Emitter 4.Collector
Unit
V
mA W ℃/W ℃
■ Electrical Characteristics Ta = 25℃
Parameter Collector- base breakdown voltage Collector- emitter breakdown voltage Emitter - base breakdown voltage Collector-base cut-off current Emitter cut-off current Collector-emitter saturation voltage Base - emitter saturation voltage
DC current gain
Collector output capacitance Transition frequency
Symbol
Test Conditions
VCBO Ic= -100 μA, IE= 0
VCEO Ic= -1 mA, IB= 0
VEBO IE= -100μA, IC= 0
ICBO VCB= -200 V , IE= 0
IEBO VEB= -4 V , IC=0
VCE(sat) IC=-20 mA, IB=-2mA
VBE(sat) IC=-20 mA, IB=-2mA
hFE(1) VCE= -10V, IC=-1mA
hFE(2) VCE= -10V, IC= -10mA
hFE(3) VCE= -10V, IC=- 30mA
Cob VCB= -20V, IE= 0,f=1MHz
fT VCE= -20V, IC= -10mA,f=100MHz
Min Typ Max Unit
-300
-300
V
-5
-250 -100
nA
-0.5 V
-0.9
25
40
25
.