L14N2

HERMETIC SILICON PHOTOTRANSISTOR L14N1 PACKAGE DIMENSIONS 0.230 (5.84) 0.209 (5.31) 0.195 (4.96) 0.178 (4.52) L14N2 0.030 (0.76) MAX 0.210 (5.34) MAX 0.500 (12.7) MIN 0.100 (2.54) 0.100 (2.54) DIA. 2 1 0.038 (.97) NOM 0.046 (1.16) 0.036 (0.92) 45° Ø0.021 (0.53) 3X 3 0.050 (1.27) SCHEMATIC (CONNECTED TO CASE) COLLECTOR 3 BASE 2 NOTES: 1. Dimensions for all drawings are in inches (mm). 2. Tolerance of ± .010 (.25) on all non-nominal dimensions unless otherwise specified. 1 EMITTER DESCRIPTION The L14N1/L14N2 are silicon phototransistors mounted in a wide angle, TO-18 package. FEATURES Hermetically sealed package Wide reception angle Device can be used as a photodiode by using the collector and base leads.  2001 Fairchild Semiconductor Corporation DS300308 6/01/01 1 OF 4 www.fairchildsemi.com HERMETIC SILICON PHOTOTRANSISTOR L14N1 ABSOLUTE MAXIMUM RATINGS Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron)(3,4,5 and 6) Soldering Temperature (Flow)(3,4 and 6) Collector to Emitter Breakdown Voltage Collector to Base Breakdown Voltage Emitter to Base Breakdwon Voltage Power Dissipation (TA = 25°C)(1) Power Dissipation (TC = 25°C)(2) (TA = 25°C unless otherwise specified) Symbol TOPR TSTG TSOL-I TSOL-F VCEO VCBO VEBO PD PD Rating -65 to +125 -65 to +150 240 for 5 sec 260 for 10 sec 30 40 5 300 600 L14N2 Unit °C °C °C °C V V V mW mW NOTE: 1. Derate power dissipation linearly 3.00 mW/°C above 25°C ambient. 2. Derate power dissipat...