L2SA812RLT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors FEATURE ƽHigh Voltage: VCEO = -50 V. ƽEpitaxial planar type. ƽNPN complement: L2SC1623 ƽPb-Free Package is available. www.DataSheet4U.DcoEmVICE MARKING AND ORDERING INFORMATION Device Marking Shipping L2SA812QLT1 M8 3000/Tape&Reel L2SA812QLT1G L2SA812RLT1 M8 (Pb-Free) M6 3000/Tape&Reel 3000/Tape&Reel L2SA812RLT1G L2SA812SLT1 M6 (Pb-Free) M7 3000/Tape&Reel 3000/Tape&Reel L2SA812SLT1G M7 (Pb-Free) MAXIMUM RATINGS 3000/Tape&Reel Rating Symbol L2SA812 Unit Collector-Emitter Voltage VCEO -50 V Collector-Base Voltage VCBO -60 V Emitter-Base Voltage VEBO -6 V Collector current-continuoun IC THERMAL CHARATEERISTICS -150 mAdc Characteristic Total Device Dissipation FR-5 Board, (1) TA=25oC Derate above 25oC Thermal Resistance, Junction to Ambient Symbol PD R θJA Max 200 1.8 556 Total Device Dissipation Alumina Substrate, (2) TA=25 oC Derate above 25oC Thermal Resistance, Junction to Ambient Junction and Storage Temperature PD R θJA Tj ,Tstg 200 2.4 417 -55 to +150 L2SA812*LT1 3 1 2 SOT-23 1 BASE 3 COLLECTOR 2 EMITTER Unit mW mW/oC oC/W mW mW/oC oC/W oC L2SA812-1/5 LESHAN RADIO COMPANY, LTD. L2SA812*LT1 ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) Characteristic Symbol Min Typ Max OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC=-1mA) Emitter-Base Breakdown Voltage www.DataSheet4U.com (IE=-50 µΑ ) Collector-Base Breakdown Voltage (IC=-50 µA) Collector Cutof...