L2SA812RLT3G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors L2SA812QLT1G Series FEATURE ƽHigh Voltage: VCEO = -50 V. ƽEpitaxial planar type. S-L2SA812QLT1G Series ƽNPN complement: L2SC1623 ƽWe declare that the material of product compliance with RoHS requirements. 3 ƽS- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 1 DEVICE MARKING AND ORDERING INFORMATION 2 Device Marking L2SA812QLT1G S-L2SA812QLT1G M8 L2SA812QLT3G S-L2SA812QLT3G L2SA812RLT1G S-L2SA812RLT1G L2SA812RLT3G S-L2SA812RLT3G L2SA812SLT1G S-L2SA812SLT1G L2SA812SLT3G S-L2SA812SLT3G M8 M6 M6 M7 M7 MAXIMUM RATINGS Shipping 3000/Tape&Reel 10000/Tape&Reel 3000/Tape&Reel 10000/Tape&Reel 3000/Tape&Reel 10000/Tape&Reel SOT-23 1 BASE 3 COLLECTOR 2 EMITTER Rating Collector-Emitter Voltage Symbol VCEO L2SA812 -50 Unit V Collector-Base Voltage Emitter-Base Voltage VCBO -60 V VEBO -6 V Collector current-continuoun IC THERMAL CHARATEERISTICS -150 mAdc Characteristic Total Device Dissipation FR-5 Board, (1) TA=25oC Derate above 25oC Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA=25 oC Derate above 25oC Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD R θJA PD R θJA Tj ,Tstg Max 200 1.8 556 200 2.4 417 -55 to +150 Unit mW mW/oC oC/W mW mW/oC oC/W oC Rev.O 1/5 LESHAN RADIO COMPANY, LTD. L2SA812QLT1G Series S-L2SA812QLT1G Series ELECT...