L2SB1197KRLT1

LESHAN RADIO COMPANY, LTD. Low Frequency Transistor PNP Silicon L2SB1197K*LT1 FEATURE ƽHigh current capacity in compact package. IC = í0.8A. www.DataSheet4U.com ƽEpitaxial planar type. ƽNPN complement: L2SD1781K ƽPb-Free Package is available. 3 1 2 SOT– 23 (TO–236AB) DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping L2SB1197KQLT1 L2SB1197KQLT1G L2SB1197KRLT1 L2SB1197KRLT1G AHQ AHQ (Pb-Free) AHR AHR (Pb-Free) 3000/Tape&Reel 3000/Tape&Reel 3000/Tape&Reel 3000/Tape&Reel MAXIMUM RATINGS(Ta=25qC) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits −40 −32 −5 −0.8 0.2 150 −55 to 150 Unit V V V A W °C °C ELECTRICAL CHARACTERISTICS(Ta=25qC) Parameter Symbol Min. Collector-base breakdown voltage BVCBO −40 Collector-emitter breakdown voltage BVCEO −32 Emitter-base breakdown voltage BVEBO −5 Collector cutoff current ICBO − Emitter cutoff current IEBO − Collector-emitter saturation voltage VCE(sat) − DC current transfer ratio hFE 120 Transition frequency fT − Output capacitance Cob − Typ. Max. Unit −−V −−V −−V − −0.5 µA − −0.5 µA − −0.5 V − 390 − 200 − MHz 12 30 pF hFE values are classified as follows : Item(*) Q R hFE 120~270 180~390 1 BASE 3 COLLECTOR 2 EMITTER Conditions IC= −50µA IC= −1mA IE= −50µA VCB= −20V VEB= −4V IC/IB= −0.5A/ −50mA VCE= −3V, IC= −100mA VCE...