L2SC3356WT1G

DATA SHEET LESHAN RADIO COMPANY, LTD. DESCRIPTION The L2SC3356WT1is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. L2SC3356WT1G S-L2SC3356WT1G 3 ORDERING INFORMATION Device L2SC3356WT1G S-L2SC3356WT1G L2SC3356WT3G S-L2SC3356WT3G Marking 24 24 Shipping 3000/Tape & Reel 10000/Tape & Reel 1 2 SC-70 FEATURES We declare that the material of product compliance with RoHS requirements. Low Noise and High Gain NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz High Power Gain MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz ABSOLUTE MAXIMUM RATINGS (TA = 25
C) Collector to Base Voltage VCBO 20 V Collector to Emitter Voltage VCEO 12 V Emitter to Base Voltage VEBO 3.0 V Collector Current IC 100 mA Total Power Dissipation PT 150 mW Junction Temperature Tj 150
C Storage Temperature Tstg 65 to +150
C ELECTRICAL CHARACTERISTICS (TA = 25
C) CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Collector Cutoff Current ICBO 1.0
A VCB = 10 V, IE = 0 Emitter Cutoff Current IEBO 1.0
A VEB = 1.0 V, IC = 0 DC Current Gain hFE 82 170 270 VCE = 3 V, IC = 10 mA Gain Bandwidth Product fT 7 GHz VCE = 10 V, IC = 20 mA Feed-Back Capacitance Cre** 0.55 1.0 pF VCB = 10 V, IE = ...