L2SC3837LT1G

LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor z Features 1.High transition frequency.(Typ.fT=1.5GHz) 2.Small rbb`Cc and high gain.(Typ.6ps) 3.Small NF. 4.We declare that the material of product compliance with RoHS requirements. 5.S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Symbol Value Collector-Base Voltage VCBO 30 Collector-Emitter Voltage VCEO 18 Emitter-base voltage VEBO 3 Collector Current IC 50 Collector power dissipation PC 0.2 Junction temperature Tj 150 Storage temperature Tstg -55~+150 Unit V V V mA W °C °C DEVICE MARKING L2SC3837LT1G;S-L2SC3837LT1G=AP z ORDERING INFORMATION Device L2SC3837LT1G S-L2SC3837LT1G L2SC3837LT3G S-L2SC3837LT3G Package SOT-23 SOT-23 Shipping 3000/Tape & Reel 10000/Tape & Reel L2SC3837LT1G S-L2SC3837LT1G 3 1 2 SOT-23 COLLECTOR 3 1 BASE 2 EMITTER ELECTRICAL CHARACTERISTICS(TA= 25°C) Parameter Symbol Min. Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob 30 18 3 56 600 - Collector-base time constant rbb`Cc - Noise factor NF - Typ - 1500 0.9 6 4.5 Max. 0.5 0.5 0.5 180 1.5 13 - Unit...