LESHAN RADIO COMPANY, LTD.
High-Frequency Amplifier Transistor
z Features 1.High transition frequency.(Typ.fT=3.2GHz) ...
LESHAN RADIO COMPANY, LTD.
High-Frequency Amplifier Transistor
z Features 1.High transition frequency.(Typ.fT=3.2GHz) 2.Small rbb`Cc and high gain.(Typ.4ps)
3.Small NF. 4.We declare that the material of product compliance with RoHS requirements.
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Collector-Base
Voltage
VCBO
20
V
Collector-Emitter
Voltage
VCEO
11
V
Emitter-base
voltage
VEBO
3
V
Collector Current
IC
50
mA
Collector power dissipation
PC
0.2
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
-55~+150
°C
DEVICE MARKING L2SC3838NLT1G=APN
z ORDERING INFORMATION
Device L2SC3838NLT1G L2SC3838NLT3G
Package SOT-23 SOT-23
Shipping 3000/Tape & Reel 10000/Tape & Reel
L2SC3838NLT1G
3
1 2
COLLECTOR 3
1 BASE
2 EMITTER
ELECTRICAL CHARACTERISTICS(TA = 25°C)
Parameter
Symbol Min.
Collector-base breakdown
voltage
BVCBO
20
Collector-emitter breakdown
voltage BVCEO
11
Emitter-base breakdown
voltage
BVEBO
3
Collector cutoff current
ICBO
-
Emitter cutoff current
IEBO
-
Collector-emitter saturation
voltage
VCE(sat)
-
DC current transfer ratio
hFE
56
Transition frequency
fT
1.4
Output capacitance
Cob
-
Collector-base time constant
rbb`Cc
-
Noise factor
NF
-
Typ
Max. Unit Conditions
-
-
V
IC=10µA
-
-
V
IC=1mA
-
-
V
IE=10µA
-
0.5
µA
VCB=10V
-
0.5
µA
VEB= 2 V
-
0.5
V
IC/IB=10mA/5mA
-
120
-
VCE/IC=10V/5mA
3.2
-
GHz VCE=10V, IE=-10mA, f=500MHz
0....
