L2SC4081QT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon FEATURE ƽLow Cob,Cob=2pF(Typ.). L2SC4081QT1G Series S-L2SC4081QT1G Series ƽEpitaxial planar type. ƽPNP complement:L2SA1576A ƽWe declare that the material of product compliance with RoHS requirements. 3 ƽS- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 1 DEVICE MARKING AND ORDERING INFORMATION 2 Device L2SC4081QT1G S-L2SC4081QT1G L2SC4081QT3G S-L2SC4081QT3G L2SC4081RT1G S-L2SC4081RT1G L2SC4081RT3G S-L2SC4081RT3G L2SC4081ST1G S-L2SC4081ST1G L2SC4081ST3G S-L2SC4081ST3G Marking BQ BQ BR BR BS BS Shipping 3000/Tape&Reel 10000/Tape&Reel 3000/Tape&Reel 10000/Tape&Reel 3000/Tape&Reel 10000/Tape&Reel SC-70/SOT– 323 1 BASE 3 COLLECTOR 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO Collector–Base Voltage V CBO Emitter–Base Voltage V EBO Collector Current — Continuous I C Collector power dissipation PC Junction temperature Tj Storage temperature T stg 50 V 60 V 7.0 V 150 mAdc 0.15 W 150 °C -55 ~+150 °C Rev.O 1/5 LESHAN RADIO COMPANY, LTD. L2SC4081QT1G Series S-L2SC4081QT1G Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Collector–Emitter Breakdown Voltage (IC = 1 mA) Emitter–Base Breakdown Voltage (IE = 50 µA) Collector–Base Breakdown Voltage (IC = 50 µA) Collector Cutoff Current (VCB = 60 V) Emitter cutoff current (VEB = ...