L2SC4083NWT1G

LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site zand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. L2SC4083NWT1G S-L2SC4083NWT1G 3 Ordering Information Device L2SC4083NWT1G S-L2SC4083NWT1G L2SC4083NWT1G S-L2SC4083NWT1G Marking 4N 4N Shipping 3000/Tape&Reel 10000/Tape&Reel 1 2 SC-70/SOT-323 Absolute maximum ratings (Ta=25 oC) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits 20 11 3 50 0.15 150 - 55~+150 Unit V V V mA W oC oC 1 BASE 3 COLLECTOR 2 EMITTER Driver Marking L2SC4083NWT1G;S-L2SC4083NWT1G=4N Electrical characteristics (Ta=25 oC) Parameter Symbol Min. Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Collector-base time constant Noise factor BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob rbb'·Cc NF 20 11 3 56 1.4 Typ. 3.2 0.8 4 3.5 Max. 0.5 0.5 0.5 120 1.5 12 Unit V V V uA uA V GHz pF ps dB Conditions IC = 10 µA IC = 1mA IE = 10 µA VCB = 10V VEB = 2V IC/IB = 10mA/5mA VCE/IC = 10V/5mA VCB = 10V , IC = 10mA , f ...