L2SD1781KQLT1G

LRC LESHAN RADIO COMPANY,LTD. Medium Power Transistor (32V, 0.8A) L2SD1781K*LT1www.DataSheet4U.com FFeatures 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the L2SB1197K*LT1 4) Pb Free Package is Available. FStructure Epitaxial planar type NPN silicon transistor FAbsolute maximum ratings (Ta = 25_C) L2SD1781K*LT1 3 1 2 SOT-23 /TO-236AB COLLECTOR 3 1 BASE 2 EMITTER ORDERING INFORMATION Device Marking Shipping L2SD1781KQLT1 AFQ 3000 Tape & Reel L2SD1781KQLT1G AFQ(Pb-Free) 3000 Tape & Reel L2SD1781KRLT1 AFR 3000 Tape & Reel L2SD1781KRLT1G AFR(Pb-Free) 3000 Tape & Reel L2SD1781K*LT1-1/4 LRC FElectrical characteristics (Ta = 25_C) www.DataSheet4U.com LESHAN RADIO COMPANY,LTD. L2SD1781K*LT1 DEVICE MARKING L2SD1781KQLT1=AFQ L2S1781KRLT1=AFR ltem hFE Q 120~270 R 180~390 Electrical characteristic curves L2SD1781K*LT1-2/4 LRC www.DataSheet4U.com LESHAN RADIO COMPANY,LTD. L2SD1781K*LT1 L2SD1781K*LT1-3/4 LRC LESHAN RADIO COMPANY,LTD. www.DataSheet4U.com V A L 3 BS 12 G C D H K 0.037 0.95 L2SD1781K*LT1 SOT-23 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM INCHES MILLIMETERS MIN MAX MIN MAX A 0.1102 0.1197 2.80 3.04 B 0.0472 0.0551 1.20 1.40 C 0.0350 0.0440 0.89 1.11 D 0.0150 0.0200 0.37 0.50 G 0.0701 0.0807 1.78 2.04 H 0.0005 0.0040 0.013 0.100 J 0.0034 0.0070 0.085 0.177 J K 0.0140 0.0285 0.35 0.69 L ...