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L2SD2114KVLT3G Datasheet

Part Number L2SD2114KVLT3G
Manufacturers Leshan Radio Company
Logo Leshan Radio Company
Description NPN silicon transistor
Datasheet L2SD2114KVLT3G DatasheetL2SD2114KVLT3G Datasheet (PDF)

Epitaxial planar type LESHAN RADIO COMPANY, LTD. NPN silicon transistor L2SD2114KVLT1G Series zFeatures 1) High DC current gain. S-L2SD2114KVLT1G Series hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) 1 2 4) We declare that the material of product compliance with RoHS requirements. 5) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qual.

  L2SD2114KVLT3G   L2SD2114KVLT3G






NPN silicon transistor

Epitaxial planar type LESHAN RADIO COMPANY, LTD. NPN silicon transistor L2SD2114KVLT1G Series zFeatures 1) High DC current gain. S-L2SD2114KVLT1G Series hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) 1 2 4) We declare that the material of product compliance with RoHS requirements. 5) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. SOT– 23 (TO–236AB) zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Collector-base voltage Collector-emitter voltage Emitter-base voltage VCBO VCEO VEBO Collector current IC Collector power dissipation Junction temperature Storage temperature ∗ Single pulse Pw=100ms PC Tj Tstg Limits 25 20 12 0.5 1 0.2 150 −55∼+150 Unit V V V A(DC) A(Pulse) ∗ W °C °C COLLECTOR 3 1 BASE 2 EMITTER zElectrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) 25 20 12 − − − − − − − − 0.18 − − − 0.5 0.5 0.4 V IC=10µA V IC=1mA V IE=10µA µA VCB=20V µA VEB=10V V IC/IB=500mA/20mA DC current transfer ratio Transition frequency Output capacitance Output On-resistance ∗ Measured using pulse current hFE 820 − 2700 − VC.


2015-08-11 : 2SJ147    DMF-50036ZNBU-FW    HA11417    AP1512    AP1512A    AP1661A    AP1662    AP1680    AP1509    AP1507   


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