L34F3C

T-1 (3mm) INFRA-RED EMITTING DIODES L34F3C L34SF4C L34F3BT L34SF4BT Features !MECHANICALLY AND SPECTRALLY MATCHED Description F3 Made with Gallium Arsenide Infrared Emitting diodes. SF4 Made with Gallium Aluminum Arsenide Infrared Emitting diodes. TO THE L32P3C PHOTOTRANSISTOR. !BOTH WATER CLEAR LENS AND BLUE TRANSPARENT LENS AVAILABLE HIGH POWER OUTPUT. Package Dimensions Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.25(0.01") unless otherwise noted. 3. Lead spacing is measured where the lead emerge package. 4. Specifications are subject to change without notice. SPEC NO:CDA0542 APPROVED: J.LU REV NO: V.1 CHECKED: DATE: OCT/29/2001 DRAWN:X.Q.ZHENG PAGE: 1 OF 4 Free Datasheet http://www.datasheet.in/ Selection Guide Par t No . Dic e L en s Ty p e Po (m W/s r ) @20m A Min . L 3 4F 3 C L34F3BT L34SF4C L34SF4BT GaAs GaAs GaAlAs GaAlAs WATER CLEAR BLUE TRANSPARENT WATER CLEAR BLUE TRANSPARENT 2 2 2 2 Ty p . 10 5 10 4 Po (m W/s r ) @50m A Min . 5 8 5 8 Ty p . 20 20 20 20 V i ew i n g An g l e 2θ1/2 5 0° 5 0° 5 0° 5 0° Note: 1. θ1/2 is the angle from optical centerline where the luminous intensity is 1/2 the optical centerline value. Electrical / Optical Characteristics at T)=25°C It em Forward Voltage Reverse Current Junction Capacitance Peak Spectral Wavelength Spectral Bandwidth P/N F3 S F4 F3 S F4 F3 S F4 F3 S F4 F3 S F4 Sy m b o l VF IR C λP ∆λ Ty p . 1.2 1.3 90 90 9 40 880 50 50 Max . 1.5 1.7 10 10 Un it V uA pF nm nm Co n d it io n IF...