L74VHC1G01

LESHAN RADIO COMPANY, LTD. 2–Input NAND Gate with Open Drain Output L74VHC1G01 The L74VHC1G01 is an advanced high speed CMOS 2–input NAND gate with an open drain output fabricated with silicon gate CMOS technology. It achieves high speed peration similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including an open drain output which provides the ability to set output switching level. This allows the L74VHC1G01 to be used to interface 5 V circuits to circuits of any voltage between V CC and 7 V using an external resistor and power supply. The L74VHC1G01 input structure provides protection when voltages up to 7 V are applied, regardless of the supply voltage. High Speed: t PD = 3.7 ns (Typ) at V CC = 5 V Low Internal Power Dissipation: I CC = 2 mA (Max) at T A = 25°C Power Down Protection Provided on Inputs Pin and Function Compatible with Other Standard Logic Families Chip Complexity: FETs = 62; Equivalent Gates = 16 MARKING DIAGRAMS 5 4 1 2 3 V0d SC–88A / SOT–353/SC–70 DF SUFFIX Pin 1 d = Date Code 5 4 Figure 1. Pinout (Top View) 1 2 3 V0d Figure 2. Logic Symbol Pin 1 d = Date Code TSOP–5/SOT–23/SC–59 DT SUFFIX FUNCTION TABLE PIN ASSIGNMENT 1 2 3 4 5 IN B IN A GND OUT Y V CC A L L H H Inputs B L H L H Output Y Z Z Z L ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. www.DataSheet4U.com ...