L8050PLT1

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon FEATURE ƽHigh current capacity in compact package. IC = 0.8A. ƽEpitaxial planar type. ƽPNP complement: L8550 ƽPb-Free Package is available. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping L8050PLT1 80P 3000/Tape&Reel L8050PLT1G 80P (Pb-Free) 3000/Tape&Reel L8050QLT1 1YC 3000/Tape&Reel L8050QLT1G 1YC (Pb-Free) 3000/Tape&Reel MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-continuoun Symbol VCEO VCBO VEBO IC Max 25 40 5 800 Unit V V V mAdc THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board,(1) TA=25°C Derate above 25°C Thermal Resistance,Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA=25°C Derate above 25°C Symbol PD R θJ A PD Max Unit 225 mW 1.8 mW/°C 556 °C/W 300 mW 2.4 mW/°C Thermal Resistance,Junction to Ambient Junction and Storage Temperature R θJ A Tj,T Stg 417 -55 to +150 °C/W °C L8050*LT1 3 1 2 SOT–23 COLLECTOR 3 1 BASE 2 EMITTER L8050*LT1–1/3 LESHAN RADIO COMPANY, LTD. ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) Characteristic Symbol Min OFF CHARACTERISTICS Typ Collector-Emitter Breakdown Voltage (IC=1.0mA) Emitter-Base Breakdown Voltage (IE=100µΑ) Collector-Base Breakdown Voltage (IC=100µΑ) Collector Cutoff Current (VCB=35V) Emitter Cutoff Current (VEB=4V) V(BR)CEO V(BR)EBO V(BR)CBO ICBO IEBO 25 5 40 – – – – – – –...