L8050SLT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon FEATURE ƽHigh current capacity in compact package. IC = 0.8A. ƽEpitaxial planar type. ƽNPN complement: L8050 ƽPb-Free Package is available. ƽS- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping L8050PLT1G S-L8050PLT1G 80P 3000/Tape&Reel L8050PLT3G S-L8050PLT3G 80P 10000/Tape&Reel L8050QLT1G S- L8050QLT1G 1YC 3000/Tape&Reel L8050QLT3G S-L8050QLT3G 1YC 10000/Tape&Reel L8050RLT1G S-L8050RLT1G 1YE 3000/Tape&Reel L8050RLT3G S-L8050RLT3G 1YE 10000/Tape&Reel L8050SLT1G L8050SLT3G S-L8050SLT1G S-L8050SLT3G 80S 80S 3000/Tape&Reel 10000/Tape&Reel MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-continuoun THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board,(1) TA=25°C Derate above 25°C Thermal Resistance,Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA=25°C Derate above 25°C Thermal Resistance,Junction to Ambient Junction and Storage Temperature 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Symbol VCEO VCBO VEBO IC Max 25 40 5 800 Unit V V V mAdc Symbol PD R θJ A PD R θJ A T j,T St g Max Unit 225 mW 1.8 mW/°C 556 °C/W 300 mW 2.4 mW/°C 417 -55 to +150 °C/W °C L8050PLT1G Series S-L8050PLT1...