L8550

LESHAN RADIO COMPANY, LTD. TO-92 Plastic-Encapsulate Transistors L8550 FEATURES Power dissipation PCM : 1 A 3. COLLECTOR TRANSISTOR˄ PNP ˅ TO ü 92 W ˄Tamb=25ć˅ 1.EMITTER Collector current ICM: -1.5 Collector-base voltage 2. BASE V(BR)CBO :- 40 V Operating and storage junction temperature range TJ ˈT stg: -55ć to +150ć ELECTRICAL CHARACTERISTICS Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current 1 2 3 ˄ Tamb=25ć Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE˄1˅ unless Test otherwise MIN -40 -25 -5 specified TYP ˅ MAX UNIT V V V -0.1 -0.1 -0.1 ­A ­A •A conditions IE=0 IB=0 IC=0 IE=0 IE=0 IC=0 Ic= -100 ­A ˈ IC= -0.1 IE= -100 VCB= -40 VCE= -20 VEB= -5 mA , ­Aˈ V, V, V, VCE= -1V , IC=-100 mA VCE=-1V , IC=-800 mA IC=-800 m,IB=-80 mA IC=-800mA,IB=-80 mA VCE=-10 V, IC=-50mA 85 40 300 DC current gain h FE˄2˅ Collector-emitter saturation voltage Base-emitter saturation voltage VCE(sat) VBE(sat) -0.5 -1.2 V V Transition frequency f T 100 MHz f =30 MHz CLASSIFICATION OF h FE(1) Rank Range B 85-160 C 120-200 D 160-300 L8550-1/3 LESHAN RADIO COMPANY, LTD. Typical Characteristics L8550 L8550-2/3 LESHAN RADIO COMPANY, LTD. TO-92 PACKAGE OUTLINE DIMENSIONS D D1 A A1 E b ¶ e e1 Symbol A A1 b c D D1 E e e1 L Ö Dimensions In Millimeters Min 3.300 1.100 0.380 0.360 4.400 3.430 4.300 1.270TYP 2.440 14.100 0.0...