L9012RLT3G

General Purpose Transistors LESHAN RADIO COMPANY, LTD. PNP Silicon FEATURE We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. DEVICE MARKING AND ORDERING INFORMATION L9012PLT1G Series S-L9012PLT1G Series Device L9012PLT1G S-L9012PLT1G L9012PLT3G S-L9012PLT3G L9012QLT1G S-L9012QLT1G L9012QLT3G S-L9012QLT3G L9012RLT1G S-L9012RLT1G L9012RLT3G L9012RLT3G L9012SLT1G S-L9012SLT1G L9012SLT3G S-L9012SLT3G Marking 12P Shipping 3000/Tape&Reel 12P 12Q 10000/Tape&Reel 3000/Tape&Reel 12Q 10000/Tape&Reel 12R 3000/Tape&Reel 12R 10000/Tape&Reel 12S 3000/Tape&Reel 12S 3000/Tape&Reel 12S 10000/Tape&Reel 3 1 2 SOT-23 (TO-236AB) 1 BASE 3 COLLECTOR MAXIMUM RATINGS Rating Symbol Value Unit 2 EMITTER Collector-Emitter Voltage VCEO Collector-Base Voltage VCBO Emitter-Base Voltage VEBO Collector current-continuoun IC THERMAL CHARATEERISTICS -20 -40 -5 -500 V V V mAdc Characteristic Total Device Dissipation FR-5 Board, (1) TA=25oC Derate above 25oC Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA=25 oC Derate above 25oC Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD R θ JA PD R θJA Tj ,Tstg Max 225 1.8 556 300 2.4 417 -55 to +150 Unit mW mW/oC oC/W mW mW/oC oC/W oC 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in...