L9013QLT3G

General Purpose Transistors LESHAN RADIO COMPANY, LTD. NPN Silicon FEATURE We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. L9013PLT1G Series S-L9013PLT1G DEVICE MARKING AND ORDERING INFORMATION Series Device L9013PLT1G S-L9013PLT1G L9013PLT3G S-L9013PLT3G L9013QLT1G S-L9013QLT1G L9013QLT3G S-L9013QLT3G L9013RLT1G S-L9013RLT1G L9013RLT3G S-L9013RLT3G L9013SLT1G S-L9013SLT1G L9013SLT3G S-L9013SLT3G MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Marking 13P 13P 13Q 13Q 13R 13R 13S 13S Symbol VCEO VCBO VEBO Shipping 3000/Tape&Reel 10000/Tape&Reel 3000/Tape&Reel 10000/Tape&Reel 3000/Tape&Reel 10000/Tape&Reel 3000/Tape&Reel 10000/Tape&Reel Value 20 40 5 Unit V V V 3 1 2 SOT-23 (TO-236AB) 1 BASE 3 COLLECTOR 2 EMITTER Collector current-continuoun IC THERMAL CHARATEERISTICS 500 mAdc Characteristic Total Device Dissipation FR-5 Board, (1) TA=25oC Derate above 25oC Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA=25 oC Derate above 25oC Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD R θ JA PD R θJA Tj ,Tstg Max 225 1.8 556 300 2.4 417 -55 to +150 Unit mW mW/oC oC/W mW mW/oC oC/W oC 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. ELECTRICAL CHA...