LA733P

LA733P Amplifier Transistors PNP Silicon MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current – Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Symbol RqJA RqJC Value –48 –60 –5.0 –100 Unit Vdc Vdc Vdc mAdc 625 mW 5.0 mW/°C 1.5 12 –55 to +150 Watts mW/°C °C Max Unit 200 °C/W 83.3 °C/W http://onsemi.com COLLECTOR 2 3 BASE 1 EMITTER 1 23 TO–92 CASE 29 STYLE 14 MARKING DIAGRAM LA 733x YWW LA733x = Specific Device Code x =P Y = Year WW = Work Week ORDERING INFORMATION Device Package Shipping LA733P TO–92 5000 Units/Box © Semiconductor Components Industries, LLC, 2002 June, 2002 – Rev. 2 1 Publication Order Number: LA733P/D LA733P ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector–Emitter Breakdown Voltage (IC = –1.0 mAdc, IB = 0) V(BR)CEO –48 – – Vdc Collector–Base Breakdown Voltage (IC = –10 mAdc, IE = 0) Emitter–Base Breakdown Voltage (IE = –10 mAdc, IC = 0) Collector–Base Leakage Current (VCB = –60 V) V(BR)CBO –60 – – Vdc V(BR)EBO –5.0 – – Vdc ICBO – – –100 nAdc Emitter–Base Leakage Current (VEB = –5.0 V, IC = 0) Collector–Emitter Leakage Cur...