LB122T

www.DataSheet4U.com DC COMPONENTS CO., LTD. R LB122T DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN TRIPLE DIFFUSED PLANAR TRANSISTOR Description Designed for use in medium power switching applications. Pinning 1 = Emitter 2 = Collector 3 = Base .304(7.72) .285(7.52) .105(2.66) .095(2.41) TO-126 .041(1.05) .037(0.95) .154(3.91) .150(3.81) .152(3.86) .138(3.50) Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (pulse) Base Current (DC) Base Current (pulse) Total Power Dissipation(TC=25 C) Junction Temperature Storage Temperature o .055(1.39) .045(1.14) Symbol VCBO VCEO VEBO IC IC IB IB PD TJ TSTG Rating 600 400 6 800 1600 100 200 20 +150 -55 to +150 Unit V V V mA mA mA mA W o o .279(7.09) .275(6.99) 1 2 3 3 Typ .052(1.32) .048(1.22) 3 Typ o o .620(15.75) .600(15.25) .032(0.81) .028(0.71) .189(4.80) .171(4.34) .022 (0.55) Typ 3 Typ o C 3 Typ Dimensions in inches and (millimeters) o C Electrical Characteristics o Characteristic (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCBO BVCEO BVEBO ICBO ICEO IEBO VCE(sat)1 VCE(sat)2 VBE(sat) hFE1 hFE2 Toff 380µs, Duty Cycle Min 600 400 6 10 10 2% Typ - Max 10 10 10 0.4 0.8 1 40 0.6 Unit V V V µA µA µA V V V µS IC=10mA IE=10µA Test Conditions IC=100µA Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut...