LBAS20HT1G S-LBAS20HT1G
High Voltage Switching Diode
1. FEATURES
● We declare that the material of product compliance wi...
LBAS20HT1G S-LBAS20HT1G
High
Voltage Switching Diode
1. FEATURES
● We declare that the material of product compliance with RoHS requirements and Halogen Free.
● S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable.
2. DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
LBAS20HT1G
JR
3000/Tape&Reel
LBAS20HT3G
JR
10000/Tape&Reel
SOD323(SC-76)
1 CATHODE
2 ANODE
3. MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Limits
Unit
Continuous Reverse
Voltage
VR
200
V
Peak Forward Current
IF
200
mA
Peak Forward Surge Current
IFM(surge)
625
mA
4.THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR–5 Board(Note 1) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Range 1.FR–5 Minimum Pad
Symbol
PD
RθJA TJ,Tstg
Limits
Unit
200
mW
1.57 635 -55~+150
mW/℃ ℃/W
℃
5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC)
Characteristic
Symbol
Min.
Typ.
Max.
Unit
Reverse
Voltage Leakage Current
µA
(VR = 200 V)
IR
-
-
1
(VR = 200 V, TJ = 150°C)
-
-
100
Reverse Breakdown
Voltage (IBR = 100 µA)
V
V(BR)
200
-
-
Forward
voltage
mV
(IF =100mA)
VF
-
-
1000
(IF =200mA)
-
-
1250
Diode Capacitance (VR = 0, f = 1.0 MHz)
pF
CD
-
-
5
Reverse Recovery Time (IF = IR = 30 mA, RL = 100 Ω)
ns
trr
-
-
50
Leshan Radio Company, LTD.
Rev.A Jan. 2018
1/3
IF,Forward Current(A) IR,Reverse Current...