LBAS40BST5G

LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE Features Low forward current Guard ring protected Low diode capacitance. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. APPLICATIONS Ultra high-speed switching Voltage clamping Protection circuits. Blocking diodes. DESCRIPTION Planar Schottky barrier diodes with an integrated guard ring for stress protection. We declare that the material of product compliance with RoHS requirements. LBAS40BST5G S-LBAS40BST5G 1 2 SOD882 1 Cathode 2 Anode ORDERING INFORMATION Device LBAS40BST1G S-LBAS40BST1G LBAS40BST3G S-LBAS40BST3G LBAS40BST5G S-LBAS40BST5G Marking U U U Shipping 5000/Tape&Reel 8000/Tape&Reel 10000/Tape&Reel Rev.A 1/4 LESHAN RADIO COMPANY, LTD. LBAS40BST5G , S-LBAS40BST5G MAXIMUM RATINGS (TA = 25°C) Parameter Continuous reverse voltage Continuous forward current Repetitive Peak forward surge current Non-repetitive peak forward current Storage temperature Junction temperature Operating ambient temperature Symbol VR IF IFSM IFSM Tstg Tj Tamb Min. -65 -65 Max. 40 120 120 200 +150 150 +150 Unit V mA mA mA °C °C °C Conditions tp<1s;δ<0.5 tp<10ms ELECTRICAL CHARACTERISTICS(TA = 25°C) Parameter Symbol Max. Unit Forward voltage(Fig.1) VF 400 mV 560 mv 1 v Reverse current(Fig.2 ;note1) IR 1 µΑ 10 µA Diode capacitance(Fig.4) Cd 5 pF Conditions IF=1mA IF=10mA IF=40mA VR=30V VR=40V f=1MHz;VR=0 Note: 1. Pul...