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LBC807-16LT1 Datasheet

Part Number LBC807-16LT1
Manufacturers Leshan Radio Company
Logo Leshan Radio Company
Description (LBC807-xxLT1) General Purpose Transistors PNP Silicon
Datasheet LBC807-16LT1 DatasheetLBC807-16LT1 Datasheet (PDF)

LESHAN RADIO COMPANY, LTD. General Purpose Transistors www.datasheet4u.com PNP Silicon FEATURE ƽCollector current capability IC = -500 mA. ƽCollector-emitter voltage VCEO(max) = -45 V. ƽGeneral purpose switching and amplification. ƽNPN complement: LBC817 Series. ƽPb-Free Package is available. LBC807-16LT1 LBC807-25LT1 LBC807-40LT1 3 1 2 DEVICE MARKING AND ORDERING INFORMATION Device LBC807-16LT1 LBC807-16LT1G LBC807-25LT1 LBC807-25LT1G LBC807-40LT1 LBC807-40LT1G Marking 5A 5A (Pb-Free) 5B 5.

  LBC807-16LT1   LBC807-16LT1






Part Number LBC807-16LT3G
Manufacturers Leshan Radio Company
Logo Leshan Radio Company
Description General Purpose Transistors
Datasheet LBC807-16LT1 DatasheetLBC807-16LT3G Datasheet (PDF)

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon FEATURE ƽCollector current capability IC = -500 mA. ƽCollector-emitter voltage VCEO(max) = -45 V. ƽGeneral purpose switching and amplification. ƽPNP complement: LBC807 Series. ƽ We declare that the material of product compliance with RoHS requirements. ƽ S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. LBC807-16LT1G LBC807-25LT1G LBC807-4.

  LBC807-16LT1   LBC807-16LT1







Part Number LBC807-16LT1G
Manufacturers Leshan Radio Company
Logo Leshan Radio Company
Description General Purpose Transistors
Datasheet LBC807-16LT1 DatasheetLBC807-16LT1G Datasheet (PDF)

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon FEATURE ƽCollector current capability IC = -500 mA. ƽCollector-emitter voltage VCEO(max) = -45 V. ƽGeneral purpose switching and amplification. ƽPNP complement: LBC807 Series. ƽ We declare that the material of product compliance with RoHS requirements. ƽ S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. LBC807-16LT1G LBC807-25LT1G LBC807-4.

  LBC807-16LT1   LBC807-16LT1







(LBC807-xxLT1) General Purpose Transistors PNP Silicon

LESHAN RADIO COMPANY, LTD. General Purpose Transistors www.datasheet4u.com PNP Silicon FEATURE ƽCollector current capability IC = -500 mA. ƽCollector-emitter voltage VCEO(max) = -45 V. ƽGeneral purpose switching and amplification. ƽNPN complement: LBC817 Series. ƽPb-Free Package is available. LBC807-16LT1 LBC807-25LT1 LBC807-40LT1 3 1 2 DEVICE MARKING AND ORDERING INFORMATION Device LBC807-16LT1 LBC807-16LT1G LBC807-25LT1 LBC807-25LT1G LBC807-40LT1 LBC807-40LT1G Marking 5A 5A (Pb-Free) 5B 5B (Pb-Free) 5C 5C (Pb-Free) Shipping 3000/Tape&Reel 3000/Tape&Reel 3000/Tape&Reel 3000/Tape&Reel 3000/Tape&Reel 3000/Tape&Reel 1 BASE SOT–23 3 COLLECTOR 2 EMITTER MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Symbol V CEO V CBO V EBO Value –45 –50 –5.0 –500 Unit V V V mAdc IC THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Symbol PD 225 1.8 R θJA PD 300 2.4 R θJA T J , T stg 417 –55 to +150 mW mW/°C °C/W °C 556 mW mW/°C °C/W Max Unit LBC807_S-1/3 LESHAN RADIO COMPANY, LTD. LBC807 Series www.datasheet4u.com ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted.) C.


2009-06-02 : D2581    K9F5608UOC    K9F5608QOC    K9F5608DOC    LBC807-16LT1    LBC807-25LT1    LBC807-40LT1    LBC807WT1    LBC817-16LT1    LBC817-25LT1   


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